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| MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 1200 V VCE(sat) typ. = 2.2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 22 W, non repetitive VGE = 15 V, TJ = 125C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 1200 1200 20 30 90 60 120 10 ICM = 100 VCEK < VCES 370 150 -40 ... +150 V V V V A A A ms A Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W C C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz. Typical Applications q q q q space and weight savings reduced protection circuits 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Insulating material: Al2O3 Mounting torque (module) (teminals) 4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 12.7 9.6 50 130 4.6 Md q q AC and DC motor control AC servo and robot drives power supplies welding inverters dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Data according to a single IGBT/FRED unless otherwise stated. (c) 2000 IXYS All rights reserved 1-4 030 MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 6 6.5 V V Dimensions in mm (1 mm = 0.0394") V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS VGE = 0 V IC = 2 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 50 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 4 mA mA 200 nA 2.2 3.3 0.5 0.22 100 70 500 70 7.6 5.6 0.66 2.7 V nF nF nF ns ns ns ns mJ mJ Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 600 V, RG = 22 W with heatsink compound 0.33 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.2 1.8 2.5 1.9 100 60 40 200 1.32 V V A A A ns 0.66 K/W K/W Conduction VF IF IRM trr RthJC RthJS IF = 50 A, VGE = 0 V, IF = 50 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 50 A, VGE = 0 V, -diF/dt = 400 A/ms TJ = 125C, VR = 600 V with heatsink compound IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.5 V; R0 = 20.1 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 10.8 mW Thermal Response IGBT (typ.) Cth1 = 0.13 J/K; Rth1 = 0.323 K/W Cth2 = 0.32 J/K; Rth2 = 0.008 K/W Free Wheeling Diode (typ.) Cth1 = 0.10 J/K; Rth1 = 0.645 K/W Cth2 = 0.18 J/K; Rth2 = 0.013 K/W (c) 2000 IXYS All rights reserved 2-4 MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 120 TJ = 25C A 100 IC VGE=17V 15V 13V 11V 120 A TJ = 125C 100 IC 80 VGE=17V 15V 13V 11V 80 60 40 9V 60 40 20 0 0.0 9V 20 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 VCE = 20V A TJ = 25C 100 IC 180 TJ = 125C A 150 IF TJ = 25C 80 60 40 20 0 5 6 7 8 9 10 VGE 120 90 60 30 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 120 20 V VGE 15 300 ns trr VCE = 600V IC = 50A A IRM trr 80 200 10 40 5 TJ = 125C VR = 600V IF = 50A IRM 100 75-12 0 0 50 100 150 200 QG 0 250 nC 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 24 mJ Eon 120 ns 90 td(on) t 60 tr VCE = 600V VGE = 15V RG = 22W TJ = 125C 12 mJ 10 Eoff 600 Eoff ns 500 td(off) 400 t 300 200 100 0 0 20 40 60 80 IC 100 A 18 8 6 4 VCE = 600V VGE = 15V RG = 22W TJ = 125C 12 6 Eon 30 2 0 tf 0 0 20 40 60 IC 0 80 100 A Fig. 7 Typ. turn on energy and switching times versus collector current 20 mJ Eon 15 240 td(on) Eon ns 180 t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 10 mJ 1500 ns 1200 t 900 600 300 tf 0 VCE = 600V VGE = 15V IC = 50A TJ = 125C 8 6 VCE = 600V VGE = 15V IC = 50A TJ = 125C td(off) Eoff 10 tr 120 4 60 5 2 0 0 0 10 20 30 40 50 60 70 80 90 100 RG W 0 0 10 20 30 40 50 60 70 80 90 100 RG W Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 ICM 1 K/W 0.1 ZthJC RG = 22W TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 80 60 40 20 0 0 200 400 600 800 1000 1200 V VCE diode 0.01 0.001 0.0001 IGBT single pulse 75-12 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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